FDFS6N303 |
Part Number | FDFS6N303 |
Manufacturer | Fairchild Semiconductor |
Description | Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode... |
Features |
6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V. R DS(ON) = 0.050 Ω @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for DC/DC converter applications.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D C C
D
A A S
1 2 3 4
8 7 6 5
C C D D
FS FD 303 6N
G A S
G
SO-8
pin 1
A
MOSFET Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
FDFS6N303 Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage Drain C... |
Document |
FDFS6N303 Data Sheet
PDF 96.19KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDFS6N548 |
ON Semiconductor |
N-Channel MOSFET and Schottky Diode | |
2 | FDFS6N548 |
Fairchild Semiconductor |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode | |
3 | FDFS6N754 |
Fairchild Semiconductor |
N-Channel MOSFET and Schottky Diode | |
4 | FDFS2P102 |
Fairchild Semiconductor |
Integrated P-Channel MOSFET and Schottky Diode | |
5 | FDFS2P102A |
Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode |