FDFS2P102 - Fairchild Semiconductor

FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode

The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The in.

Features

a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features
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  –3.3 A,
  –20 V. RDS(ON) = 0.125 Ω @ VGS =
  –10 V RDS(ON) = 0.200 Ω @ VGS =
  –4.5 V. VF < 0.39 V @ 1 A (TJ = 125 oC). VF < 0.47 V @ 1 A. VF < 0.58 V @ 2 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. Electrically independent Schottky and MOSFET pinout for design flexibility.
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• Applications
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• DC/DC converters Load Switch Motor Drives D D C C A 1 A 2 G S A 8 7 C C.