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FDC642P |
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| Part Number | FDC642P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for s... |
| Features |
-4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications Load switch Battery protection Power management
D D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise no... |
| Document |
 FDC642P Data Sheet
PDF 269.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6420C |
ON Semiconductor |
Dual-Channel MOSFET |
|
| 2 | FDC6420C |
Fairchild Semiconductor |
20V N & P-Channel PowerTrench MOSFETs |
|
| 3 | FDC642P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDC642P-F085 |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDC642P-F085P |
ON Semiconductor |
P-Channel MOSFET |
|