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FDC6302P |
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| Part Number | FDC6302P |
| Manufacturer | Fairchild Semiconductor |
| Description | These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially ... |
| Features |
-25 V, -0.12 A continuous, -0.5 A Peak. R DS(ON) = 13 Ω @ VGS= -2.7 V R DS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
4
3
5
2
6
1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
TA = 25oC unless other wise noted FDC6302P -25 -8 Units V V A... |
| Document |
 FDC6302P Data Sheet
PDF 76.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 2 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 3 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 4 | FDC6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |
|
| 5 | FDC6304P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|