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FDC6301N |
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| Part Number | FDC6301N |
| Manufacturer | Fairchild Semiconductor |
| Description | These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially... |
| Features |
25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
SOT-23
SuperSOTTM-6 Mark: .301
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
INVERTER APPLICATION
Vcc
4
3
D
OUT
5 6
2
IN G S GND
1
Absolute Maximum Ratings
Symbol VDSS, VCC VGSS, VIN ID, IOUT PD TJ,TSTG ESD Parameter
TA = 25oC unless other wise noted FDC6301N 25 8 Units V V A
Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, VIN... |
| Document |
 FDC6301N Data Sheet
PDF 73.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 2 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|
| 3 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 4 | FDC6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |
|
| 5 | FDC6304P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|