2SK2931 - Hitachi Semiconductor

2SK2931 Silicon N-Channel MOSFET

2SK2931 Silicon N Channel MOS FET High Speed Power Switching ADE-208-554C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2931 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc.

Features

• Low on-resistance R DS =0.010 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source Outline TO
  –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2931 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 45 180 45 45 173 75 150
  –55 to +150 Unit V V A A A A mJ W °C °.