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2SK2730 |
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| Part Number | 2SK2730 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2730 Silicon N Channel MOS FET High Speed Power Switching ADE-208-493 A (Z) 2nd. Edition September 1997 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings ... |
| Features |
• • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO –3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2730 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 ±30 25 100 25 25 35 ... |
| Document |
 2SK2730 Data Sheet
PDF 51.46KB |
| Distributor | Stock | Price | Buy |
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