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2SK2640-01MR |
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| Part Number | 2SK2640-01MR |
| Manufacturer | Fuji Electric |
| Description | 2SK2640-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET ... |
| Features |
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
500V
0,9Ω
10A
50W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings T(
C=25°C), unless otherwise specified
> Equivalent Circuit
Rating 500 10 40 ±30 10 77,6 50 150 -55 ~ +150 Unit V A A V A mJ W °C °C
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non... |
| Document |
 2SK2640-01MR Data Sheet
PDF 414.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2641-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | 2SK2642-01MR |
Fuji Semiconductors |
N-Channel Silicon Power MOSFET |
|
| 3 | 2SK2643-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK2644-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 5 | 2SK2645 |
INCHANGE |
N-Channel MOSFET |
|