2SK2641-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 0,9Ω 10A 100W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characte.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 0,9Ω 10A 100W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings T( C=25°C), unless otherwise specified > Equivalent Circuit Rating 500 10 40 ±30 10 229 100 150 -55 ~ +150 Unit V A A V A mJ W °C °C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or No.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2640-01MR |
Fuji Electric |
N-channel MOS-FET | |
2 | 2SK2642-01MR |
Fuji Semiconductors |
N-Channel Silicon Power MOSFET | |
3 | 2SK2643-01 |
Fuji Electric |
N-channel MOS-FET | |
4 | 2SK2644-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
5 | 2SK2645 |
INCHANGE |
N-Channel MOSFET | |
6 | 2SK2645-01MR |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2646-01 |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2647-01 |
Fuji Electric |
N-channel MOS-FET | |
9 | 2SK2647-01MR |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2648-01 |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2649-01R |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK260 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |