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2SK2604 |
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| Part Number | 2SK2604 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2604 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) l High fo... |
| Features |
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
1.0 °C / W 50 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 27 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-06-27
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Gate−source breakdown vol... |
| Document |
 2SK2604 Data Sheet
PDF 253.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK260 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK2601 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK2601 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | 2SK2602 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK2603 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|