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2SK2554 |
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| Part Number | 2SK2554 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2554 Silicon N-Channel MOS FET ADE-208-359 D 5th. Edition Application High speed power switching Features • • • • Low on-resistance R DS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive dev... |
| Features |
• • • • Low on-resistance R DS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR* I AP * 2 3 ... |
| Document |
 2SK2554 Data Sheet
PDF 51.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2550 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 2 | 2SK2551 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 3 | 2SK2552 |
Renesas |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR |
|
| 4 | 2SK2552B |
NEC |
N-Channel MOSFET |
|
| 5 | 2SK2552C |
NEC |
MOSFET |
|