2SK2383 |
Part Number | 2SK2383 |
Manufacturer | Panasonic Semiconductor |
Description | Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5... |
Features |
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
15.5±0.5
4.5
φ3.2±0.1
10.0
3.0±0.3
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
5˚
26.5±0.5
5˚
23.4 22.0±0.5
2.0 1.2
5˚
18.6±0.5
5˚ 5˚
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±13 ±26 170 100 3 150... |
Document |
2SK2383 Data Sheet
PDF 43.77KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK2380 |
Panasonic Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2381 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK2382 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK2385 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2386 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |