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2SK2116 |
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| Part Number | 2SK2116 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Swit... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2116, 2SK2117 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2116 2SK2117 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 450 500 ±30 7 28 7 35 150 –... |
| Document |
 2SK2116 Data Sheet
PDF 33.95KB |
| Distributor | Stock | Price | Buy |
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