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2SK2022-01M |
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| Part Number | 2SK2022-01M |
| Manufacturer | Fuji Electric |
| Description | 2SK2022-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 1,6Ω ... |
| Features |
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
500V
1,6Ω
5A
40W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V G... |
| Document |
 2SK2022-01M Data Sheet
PDF 211.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2022-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK2020-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK2020-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK2020-01MR |
INCHANGE |
N-Channel MOSFET |
|
| 5 | 2SK2021-01 |
Fuji Electric |
N-channel MOS-FET |
|