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2SK2021-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 1,6Ω 5A 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Abs.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 1,6Ω 5A 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V .
2SK2021-01 - Inchange Semiconductor
·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2020-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK2020-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 3 | 2SK2020-01MR |
INCHANGE |
N-Channel MOSFET |
|
| 4 | 2SK2022-01M |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK2022-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK2023-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2023-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK2024-01 |
Fuji Electric |
Power MOSFET |
|
| 9 | 2SK2024-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK2025-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 11 | 2SK2025-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 2SK2026-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|