2SK2007 |
Part Number | 2SK2007 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching reg... |
Features |
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2007 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 20 80 20 100... |
Document |
2SK2007 Data Sheet
PDF 48.44KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK2000-R |
Fuji Electric |
Power MOSFET | |
2 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET | |
4 | 2SK2003-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK2003-01MR |
Fuji Electric |
N-channel MOS-FET |