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2SJ546 |
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| Part Number | 2SJ546 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ546 Silicon P Channel MOS FET High Speed Power Switching ADE-208-638A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive devices. •... |
| Features |
• Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SJ546 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –15 –60 –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –15 19 30 150 –55 to +150 ... |
| Document |
 2SJ546 Data Sheet
PDF 52.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ540 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 2 | 2SJ541 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 3 | 2SJ542 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | 2SJ543 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 5 | 2SJ544 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|