2SJ544 |
Part Number | 2SJ544 |
Manufacturer | Hitachi Semiconductor |
Description | 2SJ544 Silicon P Channel MOS FET High Speed Power Switching ADE-208-648A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. •... |
Features |
• Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ544 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –30 –120 –30 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –30 77 75 150 –55 t... |
Document |
2SJ544 Data Sheet
PDF 54.62KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SJ540 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
2 | 2SJ541 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
3 | 2SJ542 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
4 | 2SJ543 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
5 | 2SJ545 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |