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AM82731-012 |
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| Part Number | AM82731-012 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operaion over a wide range ... |
| Features |
intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PIN CONNECTION
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC ≤ 50˚C)
50 2.0 46 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 4.0 °C/W
*Applies only to rated RF amplifier operation
August 1992
1/3
AM82731-012
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Value Symbol... |
| Document |
 AM82731-012 Data Sheet
PDF 56.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AM82731-003 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | AM82731-006 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 3 | AM82731-025 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 4 | AM82731-050 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 5 | Am8279 |
AMD |
Programmable Keyboard/Display Interface |
|