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The AM82731-025 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a +1dB input over drive. Low RF thermal resistance, refractory/gold me.
age with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
PDISS Ic VCC TJ T STG
Power Dissipation
* Device Current
*
(TC ≤ 50°C)
100 4 46 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage
* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 2.0 °C/W
*Applies only to rated RF amplifier operation
August 1992
1/4
AM8273.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AM82731-003 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | AM82731-006 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 3 | AM82731-012 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 4 | AM82731-050 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 5 | Am8279 |
AMD |
Programmable Keyboard/Display Interface |
|
| 6 | Am8279-5 |
AMD |
Programmable Keyboard/Display Interface |
|
| 7 | AM8205 |
AiT Semiconductor |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 8 | AM8212 |
AMD |
8-Bit Input/Output Port |
|
| 9 | Am8216 |
AMD |
4-Bit Parallel Bidirectional Bus Driver |
|
| 10 | AM82223-010 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 11 | Am8224 |
AMD |
Clock Generator and Driver |
|
| 12 | Am8226 |
AMD |
4-Bit Parallel Bidirectional Bus Driver |
|