BAS125-04 - Siemens Semiconductor Group

BAS125-04 Silicon Schottky Diode

Silicon Schottky Diodes q q q BAS 125 … For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 Ordering Code Pin Configuration (tape and reel) Q62702-D1316 Q6.

Features

pation, TS ≤ 25 ˚C 3) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF IFSM Ptot Tj Tstg Values 25 100 500 250 150
  – 55 … + 150 Unit V mA mW ˚C 725 565 K/W 1) 2) 3) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 450 mW per package. Semiconductor Group 2 BAS 125 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = .