BAR63-04W |
Part Number | BAR63-04W |
Manufacturer | Siemens Semiconductor Group |
Description | BAR 63 ... W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz 3 2 1 VSO05561 BAR 63-04W BAR 63-05W ... |
Features |
. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2
Unit
V(BR) IR VF
50 -
V µA mV
I (BR) = 5 µA
Reverse current
VR = 20 V
Forward voltage
I F = 100 mA
AC characteristics Diode capacitance
CT
0.3 0.21 1.2 1 75 1.4 0.3
pF
VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz
Forward resistance
rf
τrr 2 -
Ω
I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz
Charge carrier life time
µs nH
I F = 10 mA, I R = 6 mA, I R = 3 mA
Series inductance
Ls
Semiconductor Group Semiconductor Group
22
Sep-07-1998 1998-11-01
BAR 63 ... W
Forward current IF = f (TA*;TS)... |
Document |
BAR63-04W Data Sheet
PDF 46.16KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BAR63-04 |
Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) | |
2 | BAR63-04 |
Infineon Technologies AG |
Silicon PIN Diodes | |
3 | BAR63-04W |
Infineon Technologies AG |
Silicon PIN Diodes | |
4 | BAR63-02L |
Infineon Technologies AG |
Silicon PIN Diodes | |
5 | BAR63-02V |
Infineon Technologies AG |
Silicon PIN Diodes |