BAR63-04 - Siemens Semiconductor Group

BAR63-04 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/.

Features

cified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Forward current IF = f (TA
*TS) BAR63 V(BR) 50 0.95 0.3 0.21 1.2 1 75 1.4 - V nA 50 V 1.2 pF pF 0.3 Ω 2 ns nH IR VF CT CT rf τs Ls Forward current IF = f (TA
*TS) per each Diode BAR63-04,-05,-06 mA mA TS IF TA TS IF .