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SMT002N13G1E |
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| Part Number | SMT002N13G1E |
| Manufacturer | Silikron |
| Description | It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extrem... |
| Features |
Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery SMT002N13G1E Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TA... |
| Document |
 SMT002N13G1E Data Sheet
PDF 293.23KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | SMT002NA4G1 |
Silikron |
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| 2 | SMT003P18H1 |
Silikron |
MOSFET |
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| 3 | SMT003P26G4 |
Silikron |
MOSFET |
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| 4 | SMT003P51G1 |
Silikron |
MOSFET |
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| 5 | SMT004N03T1 |
Silikron |
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