SMT004N03T1 - Silikron

SMT004N03T1 MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C .

Features

◼ Advanced MOSFET process technology
◼ Special designed for PWM, load switching and general purpose applications
◼ Ultra low on-resistance with low gate charge
◼ Fast switching and reverse body recovery
◼ 150℃ operating temperature SMT004N03T1 Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolut.