MDU2657 |
Part Number | MDU2657 |
Manufacturer | VBsemi |
Description | MDU2657RH N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.007 at VGS = 10 V 0.009 at VGS = 4.5 V ID (A)a, e 60 48 Qg (Typ) 31 nC DFN5X6 Single D D8 D7 D6 5 ... |
Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing D • Server • DC/DC G 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Continuous Source-Drain Diode Current TC = 25 °C TA =... |
Document |
MDU2657 Data Sheet
PDF 652.51KB |
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