MDU2511S - MagnaChip

MDU2511S N-Channel Trench MOSFET

The MDU2511S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU2511S is suitable device for DC/DC Converter and general purpose applications. Features à VDS = 30V à ID = 188A @VGS = 10V à RDS(ON) < 1.7 mΩ @VGS = 10V < 2.1 mΩ @VGS = 4.5V à 100% UIL Tested .

Features

à VDS = 30V à ID = 188A @VGS = 10V à RDS(ON) < 1.7 mΩ @VGS = 10V < 2.1 mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested à SBD Built In D D DD D D DD D S S SG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TA=25oC TA=70oC TC=25oC TC=100oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction.