IMBG40R036M2H |
Part Number | IMBG40R036M2H |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | . . . . . . . . 1 Maximum ratings... |
Features |
• Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection technology for best‑in‑class thermal performance • 100% avalanche tested Potential applications • SMPS • Solar PV inverters • Energy storage, UPS and battery formation • Class‑D audio • Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),typ ID Qos... |
Document |
IMBG40R036M2H Data Sheet
PDF 1.28MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IMBG40R011M2H |
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2 | IMBG40R015M2H |
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MOSFET | |
3 | IMBG40R025M2H |
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G2 MOSFET | |
4 | IMBG120R008M2H |
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5 | IMBG120R012M2H |
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1200V SiC MOSFET |