Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
FQP50N06L |
Click to view a larger image
| Part Number | FQP50N06L |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ... |
| Features |
• 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A • Low Gate Charge (Typ. 24.5 nC) • Low Crss (Typ. 90 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (T... |
| Document |
 FQP50N06L Data Sheet
PDF 1.12MB |
| Distributor | Stock | Price | Buy |
|---|
