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IS49RL36640 |
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| Part Number | IS49RL36640 |
| Manufacturer | ISSI |
| Description | ..... 9 General Notes ....... |
| Features |
RLDRAM 3
IS49RL18128 – 4 Meg x 18 x 16 Banks x 2 Ranks PRELIMINARY INFORMATION IS49RL36640 – 2Meg x 36 x 16 Banks Features • The 2.3Gb (DDP:Dual Die Package) RLDRAM 3 uses ISSI’s 1Gb RLDRAM 3 die. • 933 MHz DDR operation (1866 Mb/s/ball data rate) • Organization – 128 Meg x 18, and 64 Meg x 36 common I/O – 16 banks • 1.2V center-terminated push/pull I/O • 2.5V VEXT, 1.35V VDD, 1.2V VDDQ (optional 1.35V VDDQ for 1866 operation only). • Reduced cycle time (tRC (MIN) = 8ns) • SDR addressing • Programmable READ/WRITE latency (RL/WL) and burst length • Data mask for WRITE commands • • ... |
| Document |
 IS49RL36640 Data Sheet
PDF 8.01MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS49RL36160 |
Integrated Silicon Solution |
1 Meg x 36 x 16 Banks RLDRAM |
|
| 2 | IS49RL18128 |
ISSI |
4 Meg x 18 x 16 Banks x 2 Ranks RLDRAM3 |
|
| 3 | IS49RL18320 |
Integrated Silicon Solution |
2 Meg x 18 x 16 Banks RLDRAM |
|
| 4 | IS49FL004T |
Integrated Silicon Solution |
4 Mbit 3.3 Volt-only Firmware Hub/LPC Flash Memory |
|
| 5 | IS49NLC18160 |
Integrated Silicon Solution |
288Mb Common I/O RLDRAM 2 Memory |
|