.. 9 General Notes ....... 9 State Diagram ...
RLDRAM 3
IS49RL18128
– 4 Meg x 18 x 16 Banks x 2 Ranks
PRELIMINARY INFORMATION
IS49RL36640
– 2Meg x 36 x 16 Banks
Features
• The 2.3Gb (DDP:Dual Die Package) RLDRAM 3 uses ISSI’s 1Gb RLDRAM 3 die.
• 933 MHz DDR operation (1866 Mb/s/ball data rate)
• Organization
– 128 Meg x 18, and 64 Meg x 36 common I/O
– 16 banks
• 1.2V center-terminated push/pull I/O
• 2.5V VEXT, 1.35V VDD, 1.2V VDDQ (optional 1.35V VDDQ
for 1866 operation only).
• Reduced cycle time (tRC (MIN) = 8ns)
• SDR addressing
• Programmable READ/WRITE latency (RL/WL) and
burst length
• Data mask for WRITE commands
•
• .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS49RL18320 |
Integrated Silicon Solution |
2 Meg x 18 x 16 Banks RLDRAM | |
2 | IS49RL36160 |
Integrated Silicon Solution |
1 Meg x 36 x 16 Banks RLDRAM | |
3 | IS49RL36640 |
ISSI |
2Meg x 36 x 16 Banks RLDRAM3 | |
4 | IS49FL004T |
Integrated Silicon Solution |
4 Mbit 3.3 Volt-only Firmware Hub/LPC Flash Memory | |
5 | IS49NLC18160 |
Integrated Silicon Solution |
288Mb Common I/O RLDRAM 2 Memory | |
6 | IS49NLC18160A |
ISSI |
Common I/O RLDRAM 2 Memory | |
7 | IS49NLC18320 |
Integrated Silicon Solution |
Common I/O RLDRAM 2 Memory | |
8 | IS49NLC18320A |
Integrated Silicon Solution |
Common I/O RLDRAM 2 Memory | |
9 | IS49NLC36160 |
Integrated Silicon Solution |
Common I/O RLDRAM 2 Memory | |
10 | IS49NLC36160A |
Integrated Silicon Solution |
Common I/O RLDRAM 2 Memory | |
11 | IS49NLC36800 |
Integrated Silicon Solution |
288Mb Common I/O RLDRAM 2 Memory | |
12 | IS49NLC36800A |
ISSI |
Common I/O RLDRAM 2 Memory |