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RN2706JE |
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| Part Number | RN2706JE |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN2701JE to RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Cir... |
| Features |
tor-base voltage
RN2701JE
VCBO
−50
V
Collector-emitter voltage to 2706JE
VCEO
−50
V
RN2701JE to 2704JE
−10
Emitter-base voltage
VEBO
V
RN2705JE RN2706JE
−5
Collector current
IC
−100
mA
Collector power dissipation RN2701JE PC (Note 1) 100
mW
Junction temperature
to 2706JE
Tj
150
°C
Storage temperature range
Tstg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating con... |
| Document |
 RN2706JE Data Sheet
PDF 0.97MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RN2706 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 2 | RN2701 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 3 | RN2701JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | RN2702 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 5 | RN2702JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|