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RN2706 |
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| Part Number | RN2706 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN2701 to RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2701, RN2702, RN2703 RN2704, RN2705, RN2706 Switching, Inverter Circuit, Unit: m... |
| Features |
mmon)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage
Emitter-base voltage
Collector current Collector power dissipation Junction temperature Storage temperature range
RN2701 to 2706 RN2701 to 2704 RN2705, 2706
RN2701 to 2706
VCBO VCEO
VEBO
IC PC *
Tj Tstg
−50
V
−50
V
−10 V
−5
−100
mA
200
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the... |
| Document |
 RN2706 Data Sheet
PDF 593.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RN2701 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 2 | RN2701JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 3 | RN2702 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | RN2702JE |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 5 | RN2703 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|