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RN2605 |
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| Part Number | RN2605 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, RN2605, RN2606 Switching, Inverter Circuit, Interface ... |
| Features |
e
Collector current Collector power dissipation Junction temperature Storage temperature range
RN2601 to RN2606 RN2601 to RN2604 RN2605, RN2606
RN2601 to RN2606
VCBO VCEO
VEBO
IC PC* Tj Tstg
−50
V
−50
V
−10 V
−5
−100
mA
300
mW
150
C
−55 to 150
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ra... |
| Document |
 RN2605 Data Sheet
PDF 1.06MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RN2601 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 2 | RN2602 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 3 | RN2603 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | RN2604 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 5 | RN2606 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|