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RN1703JE |
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| Part Number | RN1703JE |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE, RN1702JE, RN1703JE RN1704JE, RN1705JE, RN1706JE Switching, Inverter Circuit... |
| Features |
(Q1, Q2 common)
Characteristics
Collector-base voltage Collector-emitter voltage
RN1701JE to 1706JE
Emitter-base voltage
RN1701JE to 1704JE
RN1705JE RN1706JE
Collector current
Collector power dissipation RN1701JE
Junction temperature
to 1706JE
Storage temperature range
Symbol
Rating
Unit
VCBO VCEO
50
V
50
V
VEBO
10 V
5
IC
100
mA
PC (Note 1) 100
mW
Tj
150
°C
Tstg
−55 to 150 °C
Equivalent Circuit
(top view)
5
4
Q1
Q2
123
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in tempera... |
| Document |
 RN1703JE Data Sheet
PDF 544.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1703 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 2 | RN1701 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1701JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 4 | RN1702 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 5 | RN1702JE |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|