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RN1109MFV |
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| Part Number | RN1109MFV |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN1107MFV to RN1109MFV Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1107MFV/08MFV/09MFV 1. Applications • Switching • Inverter Circuits • Interfaci... |
| Features |
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce
system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN2107MFV to 2109MFV
3. Equivalent Circuit
4. Bias Resistor Values
Part No. RN1107MFV RN1108MFV RN1109MFV
R1 (kΩ) 10 22 47
R2 (kΩ) 47 47 22
©2021
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Toshiba Electronic Devices & Storage Corporation
Sta... |
| Document |
 RN1109MFV Data Sheet
PDF 465.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1109 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 2 | RN1101 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1101MFV |
Toshiba |
Silicon NPN Transistor |
|
| 4 | RN1102 |
California Micro Devices Corp |
Isolated Resistor Termination Network |
|
| 5 | RN1102 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|