2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage 2N700 2N700A Emitter-Base Voltage Collector DC Current Junction Temperature Storage Temperature Total Device Dissipation at 2.
OR - BASE VOLTAGE (VOLTS) 2-64 2N700,A (continued) ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted) Characteristic Sym Test Conditions ~olleetor-Base BVCBO IC = 100 /lAde, IE = 0 ~reakdown Voltage ~olleetor-Emitter BVCEO IC = 100 /lAde, IB = 0 ~reakdown Voltage Emitter-Base BVEBO IE = 100 /lAde, IC = 0 ~reakdown Voltage Collector Cutoff Current leBO VCB = 6 Vde, IE = 0 VCB =.6 Vde, IE = 0,TA =850 C Types Min Typ Max Unit - All Types 25 32 Vdc 2N700 2N700A - 20 25 - -- Vde - All Types 0.2 0.5 Vde - All Types 2N700 - - 2N700A 0.4 2.0 /lAde 60 150 - 50 S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N70 |
UTC |
N-CHANNEL POWER MOSFET | |
2 | 2N70-CA |
UTC |
N-CHANNEL MOSFET | |
3 | 2N70-CB |
UTC |
N-CHANNEL POWER MOSFET | |
4 | 2N70-HC |
UTC |
N-CHANNEL POWER MOSFET | |
5 | 2N70-M |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 2N7000 |
Microchip |
N-Channel DMOS FET | |
7 | 2N7000 |
Motorola Inc |
TMOS FET Transistor | |
8 | 2N7000 |
NXP |
N-channel MOSFET | |
9 | 2N7000 |
Vishay Siliconix |
N-Channel MOSFET | |
10 | 2N7000 |
NTE |
N-Channel MOSFET | |
11 | 2N7000 |
INCHANGE |
N-Channel MOSFET | |
12 | 2N7000 |
ST Microelectronics |
N-Channel MOSFET |