IS61DDP2B21M36C1 |
Part Number | IS61DDP2B21M36C1 |
Manufacturer | ISSI |
Description | 1Mx36 and 2Mx18 configuration available. Common I/O read and write ports. Max. 500 MHz clock for high bandwidth Synchronous pipeline read with self-timed late write operation. Double Data R... |
Features |
DESCRIPTION
1Mx36 and 2Mx18 configuration available. Common I/O read and write ports. Max. 500 MHz clock for high bandwidth Synchronous pipeline read with self-timed late write operation. Double Data Rate (DDR) interface for read and write input ports. The 36Mb IS61DDP2B21M36C/C1/C2 and IS61DDP2B22M18C/C1/C2 are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have a common I/O bus. The rising edge of K clock initiates the read/write operation, and all internal operations are selftimed. Refer to the Timing Reference Diagram for Truth Table... |
Document |
IS61DDP2B21M36C1 Data Sheet
PDF 852.80KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IS61DDP2B21M36C |
ISSI |
36Mb DDR-IIP CIO SYNCHRONOUS SRAM | |
2 | IS61DDP2B21M36C2 |
ISSI |
36Mb DDR-IIP CIO SYNCHRONOUS SRAM | |
3 | IS61DDP2B21M36A |
Integrated Silicon Solution |
36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM | |
4 | IS61DDP2B21M36A1 |
Integrated Silicon Solution |
36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM | |
5 | IS61DDP2B21M36A2 |
Integrated Silicon Solution |
36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM |