S26KS128S |
Part Number | S26KS128S |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | 5 1.1 DDR center aligned read strobe (DCARS) functionality ...... |
Features |
• 3.0 V I/O, 11 bus signals - Single ended clock • 1.8 V I/O, 12 bus signals - Differential clock (CK, CK#) • Chip Select (CS#) • 8-bit data bus (DQ[7:0]) • Read-write data strobe (RWDS) - HYPERFLASH™ memories use RWDS only as a Read Data Strobe • Up to 333-MBps sustained read throughput • DDR: two data transfers per clock • 166-MHz clock rate (333 MBps) at 1.8 V VCC • 100-MHz clock rate (200 MBps) at 3.0 V VCC • 96-ns initial random read access time - Initial random access read latency: 5 to 16 clock cycles • Sequential burst transactions • Configurable burst characteristics - Wrapped burst l... |
Document |
S26KS128S Data Sheet
PDF 1.58MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S26KS128S |
Cypress Semiconductor |
high-speed CMOS MirrorBit NOR flash devices | |
2 | S26KS256S |
Cypress Semiconductor |
high-speed CMOS MirrorBit NOR flash devices | |
3 | S26KS256S |
Infineon |
256Mb (32MB) HYPER FLASH | |
4 | S26KS512S |
Cypress Semiconductor |
high-speed CMOS MirrorBit NOR flash devices | |
5 | S26KS512S |
Infineon |
512Mb (64MB) HYPER FLASH |