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S26KS512S |
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| Part Number | S26KS512S |
| Manufacturer | Cypress Semiconductor |
| Description | ... 4 1.1 DDR Center Aligned Read Strobe Functionality (DCARS) . 6 1.2 Error Detection and Correction Fu... |
| Features |
■ 3.0V I/O, 11 bus signals ❐ Single ended clock ■ 1.8V I/O, 12 bus signals ❐ Differential clock (CK, CK#) ■ Chip Select (CS#) ■ 8-bit data bus (DQ[7:0]) ■ Read-Write Data Strobe (RWDS) ❐ HyperFlash™ memories use RWDS only as a Read Data Strobe ■ Up to 333 MBps sustained read throughput ■ DDR – two data transfers per clock ■ 166-MHz clock rate (333 MBps) at 1.8V VCC ■ 100-MHz clock rate (200 MBps) at 3.0V VCC ■ 96-ns initial random read access time ❐ Initial random access read latency: 5 to 16 clock cycles ■ Sequential burst transactions ■ Configurable Burst Characteristics ❐ Wrapped burst leng... |
| Document |
 S26KS512S Data Sheet
PDF 1.67MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S26KS512S |
Infineon |
512Mb (64MB) HYPER FLASH |
|
| 2 | S26KS128S |
Cypress Semiconductor |
high-speed CMOS MirrorBit NOR flash devices |
|
| 3 | S26KS128S |
Infineon |
128Mb (16MB) HYPER FLASH |
|
| 4 | S26KS256S |
Cypress Semiconductor |
high-speed CMOS MirrorBit NOR flash devices |
|
| 5 | S26KS256S |
Infineon |
256Mb (32MB) HYPER FLASH |
|