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FDG6321C |
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| Part Number | FDG6321C |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These dual N & P−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially... |
| Features |
• N−Ch 0.50 A, 25 V ♦ RDS(ON) = 0.45 W @ VGS = 4.5 V ♦ RDS(ON) = 0.60 W @ VGS = 2.7 V • P−Ch −0.41 A, −25 V ♦ RDS(ON) = 1.1 W @ VGS = −4.5 V ♦ RDS(ON) = 1.5 W @ VGS = −2.7 V • Very Small Package Outline SC70−6 • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V) • Gate−Source Zener for ESD Ruggedness (>6 kV Human Body Model) • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter N−Channel P−Channel Units VDSS Drain−Source Voltage 25 VGSS Gate−Source Voltage 8 ID Dr... |
| Document |
 FDG6321C Data Sheet
PDF 229.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG6321C |
Fairchild Semiconductor |
Dual N & P Channel Digital FET |
|
| 2 | FDG6320C |
ON Semiconductor |
Dual-Channel Digital FET |
|
| 3 | FDG6320C |
Fairchild Semiconductor |
Dual N & P Channel Digital FET |
|
| 4 | FDG6322C |
Fairchild Semiconductor |
Dual N & P Channel Digital FET |
|
| 5 | FDG6322C |
ON Semiconductor |
Dual N & P Channel Digital FET |
|