STP50N65DM6 |
Part Number | STP50N65DM6 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery t... |
Features |
Order code
VDS
RDS(on) max.
ID
STP50N65DM6
650 V
91 mΩ
33 A
• Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most... |
Document |
STP50N65DM6 Data Sheet
PDF 243.93KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | STP50N05L |
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N-Channel Enhancement Mode Power MOS Transistor | |
2 | STP50N05LFI |
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N-Channel Enhancement Mode Power MOS Transistor | |
3 | STP50N06 |
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4 | STP50N06FI |
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N-Channel Enhancement Mode Power MOS Transistor | |
5 | STP50N06L |
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N-Channel Enhancement Mode Power MOS Transistor |