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VS-3C10ET07T-M3 |
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| Part Number | VS-3C10ET07T-M3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | / APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature ... |
| Features |
• Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF temperature coefficient for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant switching behavior • 175 °C maximum operating junction temperature • MPS structure for high ruggedness to forward current surge events • Meets JESD 201 class 2 whisker test • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912... |
| Document |
 VS-3C10ET07T-M3 Data Sheet
PDF 141.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VS-3C12ET07S2L-M3 |
Vishay |
650V Gen 3 Power SiC Merged PIN Schottky Diode |
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| 2 | VS-300CNQ045PbF |
Vishay |
High Performance Schottky Rectifiers |
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| 3 | VS-300MT160C |
Vishay |
Three Phase Bridge |
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| 4 | VS-300MT180C |
Vishay |
Three Phase Bridge |
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| 5 | VS-300U10A |
Vishay |
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