VS-3C12ET07S2L-M3 - Vishay

VS-3C12ET07S2L-M3 650V Gen 3 Power SiC Merged PIN Schottky Diode

/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra hi.

Features

• Majority carrier diode using Schottky technology on SiC wide band gap material
• Improved VF and efficiency by thin wafer technology
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
• 175 °C maximum operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• MPS structure for high ruggedness to forward current surge events
• Meets JESD 201 class 1A whisker test
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 .