SCT040TO65G3 - STMicroelectronics

SCT040TO65G3 Silicon carbide Power MOSFET

Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application perfor.

Features

TO-LL Order code VDS RDS(on) typ. ID SCT040TO65G3 650 V 40 mΩ 35 A
• Very fast and robust intrinsic body diode
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Source sensing pin for increased efficiency Drain (TAB) Applications
• Switching mode power supply
• DC-DC converters Description Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire tempera.