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STGB30H60DLLFBAG |
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| Part Number | STGB30H60DLLFBAG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduc... |
| Features |
AEC-Q101 qualified Maximum junction temperature: TJ = 175 °C Logic level gate drive High speed switching series Minimized tail current VCE(sat) = 1.7 V (typ.) @ IC = 30 A Low VF soft recovery co-packaged diode Tight parameters distribution Safer paralleling Low thermal resistance Applications Ignition Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequ... |
| Document |
 STGB30H60DLLFBAG Data Sheet
PDF 0.98MB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STGB30H60DF |
STMicroelectronics |
30A high speed trench gate field-stop IGBT |
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| 2 | STGB30H60DFB |
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| 3 | STGB30H65DFB2 |
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high-speed HB2 series IGBT |
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| 4 | STGB30M65DF2 |
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| 5 | STGB30NC60K |
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