STGB30H65DFB2 - STMicroelectronics

STGB30H65DFB2 high-speed HB2 series IGBT

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparalle.

Features

• Maximum junction temperature : TJ = 175 °C
• Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient Applications
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• NG1E3C2T Welding Power factor correction UPS Solar inverters Chargers Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at .