NGTB30N140IHR3WG ON Semiconductor IGBT Datasheet, en stock, prix

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NGTB30N140IHR3WG

ON Semiconductor
NGTB30N140IHR3WG
NGTB30N140IHR3WG NGTB30N140IHR3WG
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Part Number NGTB30N140IHR3WG
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description IGBT with Monolithic Free Wheeling Diode NGTB30N140IHR3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ultra Field Stop (FS) Trench construction and provides sup...
Features a robust and cost effective ultra Field Stop (FS) Trench construction and provides superior performance. It is especially designed for low on−state and is well suited for resonant or soft switching topologies, such as those used in inductive heating applications. The device contains a reverse conducting diode integrated on the same die, which makes the device construction very cost effective. Features
• Extremely Efficient Trench with Ultra Field Stop Technology
• 1400 V Breakdown Voltage
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• Th...

Document Datasheet NGTB30N140IHR3WG Data Sheet
PDF 261.60KB
Distributor Stock Price Buy

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