NGTB30N140IHR3WG |
Part Number | NGTB30N140IHR3WG |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | IGBT with Monolithic Free Wheeling Diode NGTB30N140IHR3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ultra Field Stop (FS) Trench construction and provides sup... |
Features |
a robust and cost effective ultra Field Stop (FS) Trench construction and provides superior performance. It is especially designed for low on−state and is well suited for resonant or soft switching topologies, such as those used in inductive heating applications. The device contains a reverse conducting diode integrated on the same die, which makes the device construction very cost effective.
Features
• Extremely Efficient Trench with Ultra Field Stop Technology • 1400 V Breakdown Voltage • Optimized for Low Losses in IH Cooker Application • Reliable and Cost Effective Single Die Solution • Th... |
Document |
NGTB30N140IHR3WG Data Sheet
PDF 261.60KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NGTB30N120FL2WG |
ON Semiconductor |
IGBT | |
2 | NGTB30N120IHLWG |
ON Semiconductor |
IGBT | |
3 | NGTB30N120IHRWG |
ON Semiconductor |
IGBT | |
4 | NGTB30N120IHSWG |
ON Semiconductor |
IGBT | |
5 | NGTB30N120L2WG |
ON Semiconductor |
IGBT |