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FQA90N15-F109 |
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| Part Number | FQA90N15-F109 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored... |
| Features |
• RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A • Low Gate Charge (Typ. 220 nC) • Low Crss (Typ. 200 pF) • 100% Avalanche Tested • 175°C Maximum Junction Memperature Rating Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as a... |
| Document |
 FQA90N15-F109 Data Sheet
PDF 1.24MB |
| Distributor | Stock | Price | Buy |
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