FDC6301N ON Semiconductor Dual N-Channel Digital FET Datasheet, en stock, prix

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FDC6301N

ON Semiconductor
FDC6301N
FDC6301N FDC6301N
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Part Number FDC6301N
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tai...
Features
• 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V
• Gate−Source Zener for ESD Ruggedness. >6 kV Human Body Model
• This is a Pb−Free and Halide Free Device DATA SHEET www.onsemi.com D2 S1 D1 G2 G1S2 TSOT23 6−Lead SUPERSOTt−6 CASE 419BL MARKING DIAGRAM 301 MG G 1 301 = Specific Device Code M = Assembly Operation Month G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise ...

Document Datasheet FDC6301N Data Sheet
PDF 315.50KB
Distributor Stock Price Buy

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