FDC6301N |
Part Number | FDC6301N |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tai... |
Features |
• 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V • Gate−Source Zener for ESD Ruggedness. >6 kV Human Body Model • This is a Pb−Free and Halide Free Device DATA SHEET www.onsemi.com D2 S1 D1 G2 G1S2 TSOT23 6−Lead SUPERSOTt−6 CASE 419BL MARKING DIAGRAM 301 MG G 1 301 = Specific Device Code M = Assembly Operation Month G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise ... |
Document |
FDC6301N Data Sheet
PDF 315.50KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET | |
2 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel | |
3 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET | |
4 | FDC6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET | |
5 | FDC6304P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |